dtc115em / dtc115ee / dtc115eua transistors dtc115eka / dtc115esa digital transistors (built-in resistors) dtc115em / dtc115ee / dtc115eua dtc115eka / dtc115esa ! ! ! ! features 1) built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2) the bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 3) only the on/off conditions need to be set for operation, making device design easy. 4) higher mounting densities can be achieved. ! ! ! ! structure npn digital transistor (with built-in resistors) ! ! ! ! equivalent circuit out gnd in r 1 r 2 out in gnd ! ! ! ! external dimensions (units : mm) 3 0.2 (15min.) 4 0.2 2 0.2 0.45 0.5 0.45 5 (1) (2) (3) ? 0.05 + 0.15 + 0.15 ? 0.05 2.5 + 0.4 ? 0.1 3min. (1) gnd (2) out (3) in rohm : spt eiaj : sc-72 dtc115esa (1) in (2) gnd (3) out 0~0.1 (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 1.2 0.8 0.2 0.15max. 0.2 ( 2 ) ( 1 ) rohm : vmt3 dtc115em abbreviated symbol : 29 0~0.1 (2) (1) (3) 0.1min. 2.1 0.1 1.25 0.1 0.9 0.1 0.2 0.7 0.1 0.15 0.05 0.3 2.0 0.2 1.3 0.1 0.65 0.65 + 0.1 ? 0 (1) gnd (2) in (3) out rohm : umt3 eiaj : sc-70 dtc115eua all terminals have same dimensions abbreviated symbol : 29 0.2 0.2 0.5 0.5 1.0 0.1 1.6 0.2 0.3 0.8 0.1 1.6 0.2 0.55 0.1 0.7 0.1 0.15 0.05 0.1min. (3) (2) (1) 0~0.1 ? 0.05 + 0.1 + 0.1 ? 0.05 + 0.1 ? 0.05 (1) gnd (2) in (3) out rohm : emt3 dtc115ee abbreviated symbol : 29 0~0.1 2.8 0.2 1.6 0.3min. 1.1 0.8 0.1 0.15 0.4 2.9 0.2 1.9 0.2 0.95 0.95 + 0.2 ? 0.1 ? 0.1 + 0.2 + 0.1 ? 0.06 + 0.1 ? 0.05 (2) (1) (3) (1) gnd (2) in (3) out rohm : smt3 eiaj : sc-59 dtc115eka all terminals have same dimensions abbreviated symbol : 29
dtc115em / dtc115ee / dtc115eua transistors dtc115eka / dtc115esa ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol v cc v i i o i c(max.) pd tj tstg limits 50 ? 10~ + 40 20 100 150 200 300 dtc115em / dtc115ee dtc115eua / dtc115eka dtc115esa 150 ? 55~ + 150 unit v v ma mw c c supply voltage input voltage output current power dissipation junction temperature storage temperature ! ! ! ! electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions v i(off) v o(on) i i i o(off) g i f t r 1 ? ? ? ? 82 ? 70 ? 0.1 ? ? ? 250 100 0.5 0.3 0.15 0.5 ? ? 130 v v ma a ? mhz k ? v cc = 5v, i o = 100 a v i(on) 3 ?? v o = 0.3v, i o = 1ma i o = 5ma, i i = 0.25ma v i = 5v v cc = 50v, v i = 0v i o = 5ma, v o = 5v v ce = 10v, i e =? 5ma, f = 100mhz ? ? r 2 /r 1 0.8 1 1.2 ? ? input voltage output voltage input current output current dc current gain transition frequency input resistance ? transition frequency of the device. resistance ratio ! ! ! ! package, marking, and packaging specifications type dtc115ee emt3 29 tl 3000 dtc115em vmt3 29 t2l 8000 dtc115eua umt3 29 t106 3000 dtc115eka smt3 29 t146 3000 dtc115esa spt ? tp 5000 package marking packaging code basic ordering unit (pieces)
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